Location: Virtual/Online

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Area-selective deposition (ASD) is a technology that is currently gathering momentum as enabler for bottom-up fabrication. Its main promise is the ability to process material in a self-aligned fashion, thereby eliminating alignment errors in semiconductor processing. In addition, ASD has been considered for alternative nanofabrication schemes in catalysis. By using mature thin film techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) as a starting point, the development of strategies and approaches to ASD primarily focuses on making the growth selective to specific materials or surfaces. This often involves the selective adsorption of reactant species, or as a more general approach, the deactivation of surfaces on which no growth is desired by selective functionalization. While achieving selective deposition is already difficult, maintaining the selectivity is yet another challenge, as there are numerous side-reactions that could lead to loss of selectivity. In this webinar, several aspects of ASD technology will be addressed, ranging from fundamental surface reactions to technological challenges.

Location: Virtual/Online
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Understanding the origin of stress in thin films produced by physical vapor deposition (PVD) is of key importance as excessive stress levels can lead to premature failure by cracking, buckling or interfacial delamination, which compromises device durability.

This webinar will provide an overview on how film stress develops during deposition, how it is affected by the main process parameters, and how to mitigate it. Selected examples from epitaxial, amorphous and polycrystalline thin films will be highlighted, with emphasis on metallic thin films. Models explaining the generation and relaxation of stress will be presented and discussed. The webinar will also cover practical aspects on how to measure stress during growth using wafer curvature methods.